IXYS Introduces New Family of High-Speed 300V IGBTs

29 November 2007

Posted: 29.11.07

IXYS Introduces New Family of High-Speed 300V IGBTs

November 29, 2007 -- SANTA CLARA, Calif. - (BUSINESS WIRE) - IXYS Corporation (NASDAQ:IXYS), announces the release of a new generation of fast 300V Insulated Gate Bipolar Transistors ("IGBTs") built with the IXYS robust HDMOS IGBT process. These new IGBTs are capable of hard-switching up to 100 kHz, with current ratings of 42A to 120A, the IXGH42N30C3, IXGH60N30C3, IXGH85N30C3, IXGH100N30C3, and IXGH120N30C3. These IGBTs are currently available in the TO-247 discrete package. Additional package offerings will be made available in the future. All the devices may also be co-packed with IXYS' high performance HiPerFRED((TM)) Fast Diodes. The combination of high switching speeds and low conduction losses gives power designers a new high value option for switching applications at 300V and below.

Historically, for circuits operating up to 300V, the standard discrete selection has been the MOSFET. However, presently, for circuits that are hard-switching up to 100 kHz, the obvious choices are these 300V IGBTs. These devices are optimized for low Vsat, namely lower forward voltage drop, with a higher current density capability than an equivalent MOSFET. Therefore, IXYS' new 300V IGBTs can operate with better efficiency and with a smaller die size resulting in lower costs when compared to 300V power MOSFETs. These devices are also rugged in unclamped inductive switching applications, i.e., UIS rated, comparable to most rugged power MOSFETs.

IXYS' 300V IGBTs offer a cost-effective alternative to MOSFETs for applications such as PFC circuits, UPS systems, inverters for solar energy, switch-mode or resonant-mode converters and power supplies, pulse generators, PWM light control, PWM heaters, capacitive discharge applications and in various motor control applications.