Dynex Releases New I2 Range of ION Implanted Phase Control Thyristors (SCRs)

25 May 2004

Dynex Semiconductor, a leading independent power semiconductor technology company today announced the release of the first products in a range of phase control thyristors (SCRs) using the new I2 ion implant process.

In addition to Dynex's I2 ion implant process, the thyristors (SCRs) incorporate new emitter designs to achieve all round improved performance. Not only do the new designs offer up to 30% more current in a given package, but also the dynamic turn-on and turn-off performance is such that switching losses are significantly reduced. The improved electrical characteristics can be used to reduce cooling system costs or increase the power density of the final equipment.

The first release is a matrix of 30 thyristors (SCRs), from 38mm to 88mm silicon diameter and 2200V to 8500V, designed to replace and extend the existing product line. All the products are rated at full repetitive voltage from -40C to 125C. Samples of the DCR5450W22, DCR4100W42, DCR2270Y65, DCR2400B85 and DCR1840Y85 are now available, offering average current ratings of 5450A at 2200V through to 1840A at 8500V.

All devices are offered in either 26mm or 35mm high hermetic ceramic packages. The packages can optionally accommodate internal arc shields for improved case rupture rating.

The I2 ion implanted process will enable Dynex's thyristor (SCR) range to be extended to larger diameters and higher voltages in the future. 17kV thyristors (SCRs) have already been produced for a custom requirement.

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