IXYS Releases 650V Ultra Junction X2-Class Power MOSFETs with Fast Body Diodes

13 April 2016





The intrinsic fast body diodes of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI) especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energy are removed during high-speed switching to avoid device failure and achieve high efficiency.


Like other Ultra Junction MOSFETs from IXYS, these new devices have been developed using a proprietary process technology resulting in Power MOSFETs with significantly reduced on-resistance and gate charge. They also exhibit a superior dv/dt performance and are avalanche rated as well. Thanks to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.


Suitable applications include resonant-mode power supplies, high intensity discharge (HID) lamp ballast, AC and DC motor drives, DC-DC converters, robotic and servo control, battery chargers, 3-level solar inverters, LED lighting, and Unmanned Aerial Vehicles (UAVs).


These new 650V X2 Power MOSFETs with HiPerFET™ body diodes are available in the following international standard size packages: TO-220, TO-263, SOT-227, TO-247, PLUS247, TO-264, and PLUS264. Some example part numbers include IXFA22N65X2, IXFH46N65X2, IXFK120N65X2, and IXFN150N65X2, with drain current ratings of 22A, 34A, 120A, and 145A, respectively.


 For further information, please click the following: 

Product Brief    


If you require any further information regarding this product range, please contact our sales team on the following;

Tele: 01522 814380

E-mail: sales@europowercomponents.com


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